Browsing by Subject "Semiconducting gallium arsenide"
Now showing items 1-8 of 8
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Article
Efficient spin detection across the hybrid Co/GaAs schottky interface
(2007)The electron spin detection efficiency was studied across Co/GaAs structures using photoexcitation techniques. Two sets of samples were prepared where the substrate surface was pretreated by annealing prior to growth for ...
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Article
Electron spin filtering in ferromagnet/semiconductor heterostructures
(2003)Circularly polarized light was used to generate spin-polarized electrons at room temperature in ferromagnet (FM)/GaAs Schottky diode structures. A change in the helicity-dependent photocurrent was obtained when the ...
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Article
Large ultrafast optical nonlinearities in As-rich GaAs
(1994)The measurement of large Ultrafast bandgap-resonant optical nonlinearities in As-rich samples of GaAs that have been grown at low temperatures is reported. Light-induced refractive index changes of magnitude greater than ...
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Article
Magnetic and structural properties of stoichiometric thin Fe 3Si/GaAs(0 0 1) films
(2005)In this study, we report experimental results on the structural and magnetic properties of epitaxial Fe3Si films grown on GaAs(0 0 1) by co-evaporation. X-ray reflectivity shows that relatively smooth interfaces are obtained ...
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Article
Magnetoresistance of magnetite thin films grown by pulsed laser deposition on GaAs(1 0 0) and Al2O3(0 0 0 1)
(2007)Magnetotransport properties of magnetite thin films deposited on gallium arsenide and sapphire substrates at growth temperatures between 473 and 673 K are presented. The films were grown by UV pulsed laser ablation in ...
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Article
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
(1996)We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
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Article
Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes
(2002)The effects of the interface microstructure on spin-injection efficiency in Zn1-xMnxSe/AlyGa1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization ...
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Conference Object
A schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor
(2003)A study was performed on a Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. It was reported that spin injection from a Fe Schottky contact produced a spin polarization ...